Thermal and nonthermal melting of III-V compound semiconductors
نویسندگان
چکیده
منابع مشابه
Progress in Antimonide Based III-V Compound Semiconductors and Devices
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...
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iii ACKNOWLEDGEMENTS I would like to acknowledge the support of my thesis advisor Dr. Samuel Graham. His guidance throughout this project has been tremendous and I have learned much that will benefit for the rest of my life. I would also like to thank Dr. Doolittle and Dr. Russell Dupuis for their knowledge base and their support of this project. Their generous offerings of fabricated devices, ...
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The thermal behaviour of Hg, -,Mn,Te single crystals is investigated by means of the RBS/channeling technique. The stoichiometry parameter x ranges from 0.08 to 0.2. An important release of Hg atoms is observed after annealing in hydrogen atmosphere at 240 "C for 10 min. Backscattering spectra for crystals with x = 0.2 revealed quite a sharp Hg edge proceeding towards greater depth with increas...
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Intense ultrashort laser pulses can melt crystals in less than a picosecond but, in spite of over thirty years of active research, for many materials it is not known to what extent thermal and nonthermal microscopic processes cause this ultrafast phenomenon. Here, we perform ab-initio molecular-dynamics simulations of silicon on a laser-excited potential-energy surface, exclusively revealing no...
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We use a recently developed ab initio approach to calculate the lattice thermal conductivities of compound semiconductors. An exact numerical solution of the phonon Boltzmann transport equation is implemented, which uses harmonic and anharmonic interatomic force constants determined from density functional theory as inputs. We discuss the method for calculating the anharmonic interatomic force ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2019
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.99.144101